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SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.
A
KTC2815D/L
EPITAXIAL PLANAR NPN TRANSISTOR
I J
FEATURES
Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A)
Q
C
K
Complementary to KTA1718D/L.
H F 1 2 F 3
E
M
High Speed Switching Time : tstg=1 S(Typ.)
P L
DIM A B C D E F H I J K L M O P Q
MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX
B
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25
)
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 50 50 5 2 -2 1.0 10 150 -55 150 UNIT V V V A A W
Q
1. BASE 2. COLLECTOR 3. EMITTER
DPAK
A C
I J
D
O
H G
P
F
F
L
1
2
3
DIM A B C D E F G H I J K L P Q
MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX
K
1. BASE 2. COLLECTOR 3. EMITTER
E
B
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time Note : hFE(1) Classification 2003. 3. 27 O:70~140,
)
SYMBOL ICBO IEBO V(BR)CEO hFE(1) (Note) hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf
IB1
IPAK
TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=2V, IC=0.5A VCE=2V, IC=1.5A IC=1A, IB=0.05A IC=1A, IB=0.05A VCE=2V, IC=0.5A VCB=10V, IE=0, f=1MHz
20sec INPUT IB2 IB1=-I B2 =-0.05A DUTY CYCLE < 1% = OUTPUT I B1 30 I B2
MIN. 50 70 40 -
TYP. MAX. UNIT 100 30 0.1 1.0 0.1 0.1 0.1 240 0.5 1.2 S A A V
V V MHz pF
VCC =30V
Y:120~240.
Revision No : 3
1/3
KTC2815D/L
COLLECTOR-EMITTER VOLTAGE VCE (V)
STATIC CHARACTERISTICS
COLLECTOR CURRENT I C (A) 2.4 2.0 1.6 1.2 0.8 0.4 0 0.4 0.8 1.2 30
VCE =2V COMMON EMITTER Ta=25 C
VCE - I C
1.0 0.8 0.6 0.4 0.2 0
COMMON EMITTER Ta=25 C
10
25 20
18
15 12 10 8 6 I B =2mA 4 0
I B =5mA
20
V CE =2V
30
40
BASE EMITTER VOLTAGE VBE (V)
0
0.4
0.8
1.2
1.6
2.0
2.4
20
10
0
2
4
6
8
10
COLLECTOR CURRENT I C (A)
BASE CURRENT I B (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - I C
1.0 0.8
20 I B =5mA COMMON EMITTER Ta=-55 C 10 30
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - I C
1.0 0.8 0.6 0.4 0.2 0
COMMON EMITTER Ta=100 C 10 20
0.6 0.4 0.2 0
I B =5mA
40
50
30
40
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0.4
0.8
1.2
1.6
2.0
2.4
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
V CE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
h FE - I C
300 DC CURRENT GAIN hFE
Ta=100 C
1 0.5 0.3
COMMON EMITTER I C /I B =20
100 50 30
Ta=25 C Ta=-55 C
0.1 0.05 0.03
Ta=100 C Ta=25 C Ta=-55 C
COMMON EMITTER VCE =2V
10 0.01
0.03
0.1
0.3
1
2
0.01
0.01
0.03
0.1
0.3
1
2
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
2003. 3. 27
Revision No : 3
2/3
KTC2815D/L
SAFE OPERATING AREA
10 COLLECTOR CURRENT I C (A)
I C MAX.(PULSED) * I C MAX.(CONTINOUS) DC OPERATION Ta=25 C 10ms* 1ms* 100mS*
Pc - Ta
12 COLLECTOR POWER DISSIPATION P C (W) 10 8 6 4 2 0
5 3 1 0.5 0.3 0.1 0.05 0.03 0.02 0.1
5 =2 Tc C
CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE.
VCEO MAX.
* SINGLE NONREPETITIVE PULSE Tc=25 C
Ta=25 C
0.3
1
3
10
30
100
0
25
50
75
100
125
150
175
COLLECTOR-EMITTER VOLTAGE VCE (V)
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 27
Revision No : 3
3/3

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